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| Preliminary SIM400D06AV3 VCES = 600V Ic=400A VCE(ON) typ. = 1.6V @Ic=400A "HALF-BRIDGE" IGBT MODULE Feature design technology Low VCE (sat) Low Turn-off losses Short tail current for over 20KHz Applications Motor controls VVVF inverters Inverter-type welding MC over 18KHZ SMPS, Electrolysis UPS/EPS, Robotics Package : V3 Absolute Maximum Ratings @ Tj=25 Symbol VCES VGE IC ICP IF IFM tp Viso Weight Tj Tstg Md (Per Leg) Parameter Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short circuit test, VGE = 15V, VCC = 360V Isolation Voltage test Weight of Module Junction Temperature Storage Temperature Mounting torque with screw : M6 TC = 80 TC = 25 TC = 80 TC = TC = 150 TC = Condition Ratings 600 20 400 (500) 800 400 (500) 800 Unit V V A A A A 25 6 (8) 2500 360 -40 ~ 150 -40 ~ 125 4.0 N.m V g AC @ 1 minute Static Characteristics @ Tj = 25 Parameters VCE(ON) VGE(th) ICES IGES VF RGINT Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Diode Forward Voltage Drop Integrated gate resistor (unless otherwise specified) Min Typ 1.60 5.8 Max 1.95 Unit V Test conditions IC = 400A, VGE = 15V VCE = VGE, Ic = 8 VGE = 0V, VCE = 600V VCE = 0V, VGE = V 6.5 5.0 400 1.6 1 2.0 V IF = 400A, VGE = 0V Preliminary Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25 Parameters Ciss Coss Crss td(on) tr td(off) tf VBR IRM trr Qrr Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Cathode-Anode breakdown Voltage Maximum Reverse Leakage Current Reverse Recovery Time Reverse Recovery Charge 125 20.3 600 350 SIM400D06AV3 (unless otherwise specified) Unit Test conditions VCE = 25V, VGE = V Min Typ 24670 1540 732 145 60 Max pF f = 1 MHz Inductive Switching (125 VCC = 300V ns IC = 400A, VGE = RG = 2.2 V VR = 600V ns C IF = 400A, VR = 300V di / dt = 4000A / 15V 320 80 Thermal Characteristics Symbol RJC RJC RCS Parameter Junction-to-Case (IGBT Part, Per 1/2 Module) Junction-to-Case (Diode Part, Per 1/2 Module) Case-to-Heat Sink (Conductive grease applied) Min - Typ 0.03 Max 0.12 0.22 - Unit /W Preliminary Fig.1, Output characteristic (typical) IC = f(TVJ) VGE = 15V SIM400D06AV3 Fig.2 Output characteristic (typical) IC = f(VGE) Tvj = 150 Fig.3, Transfer characteristic (typical) IC = f(TVJ) VCE = 20V Fig.4, Reverse bias RBSOA = VGE 15V, RGoff = 2.4 , Tvj = 150 Fig.5, Forward characteristic of diode IF = f(TJ) Preliminary Package Outline (dimensions in mm) SIM400D06AV3 www.semiwell.com JUNE 2008 Headquarter: #602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, Bucheon-City, S.KOREA Tel)+82-32-234-4781, Fax)+82-32-234-4789 Sales & Marketing clzhang@semwiell.com sales@semiwell.com |
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